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Transistors

Publication date: March 2003 SJC00079BED

2SB1321A

Silicon PNP epitaxial planar type

For low-frequency output amplification and driver amplification

Complementary to 2SD1992A

■ Features

• Allowing supply with the radial taping

• Large collector power dissipation P

(600 mW)

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

−60 V

Collector-emitter voltage (Base open) V

CEO

−50 V

Emitter-base voltage (Collector open) V

EBO

−7V

Collector current I

− 0.5 A

Peak collector current I

−1A

Collector power dissipation P

600 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= −10 µA, I

= 0 −60 V

Collector-emitter voltage (Base open) V

CEO

= −2 mA, I

= 0 −50 V

Emitter-base voltage (Collector open) V

EBO

= −10 µA, I

= 0 −7V

Collector-base cutoff current (Emitter open)

CBO

= −20 V, I

= 0 − 0.1 µA

Collector-emitter cutoff current (Base open)

CEO

= −20 V, I

= 0 −1 µA

Forward current transfer ratio h

FE1

= −10 V, I

= −10 mA 85 340 

FE2

= −10 V, I

= −500 mA 40 

Collector-emitter saturation voltage V

CE(sat)

= −300 mA, I

= −30 mA − 0.35 − 0.60 V

Transition frequency f

= −10 V, I

= 10 mA, f = 200 MHz 200 MHz

Collector output capacitance C

= −10 V, I

= 0, f = 1 MHz 6 15 pF

(Common base, input open circuited)

■ Electrical Characteristics T

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1: Pulse measurement

2: Rank classification

Rank Q R S No-rank

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Product of no-rank is not classified and have no marking symbol for rank.

6.9

±0.1

2.5

±0.1

0.45

1.05

±0.05

2.5

±0.5

123

2.5

±0.5

+0.10

–0.05

0.45

+0.10

–0.05

(0.8)

(1.0)(0.85)

3.5

±0.1

14.5

±0.5

(0.7) (4.0)

0.65 max.

Unit: mm

1: Emitter

2: Collector

3: Base

MT-1-A1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3 4

2SB1321A 1

Sommario

Pagina 1 - 2SB1321A

Transistors1Publication date: March 2003 SJC00079BED2SB1321ASilicon PNP epitaxial planar typeFor low-frequency output amplification and driver amplifi

Pagina 2

2SB1321A2SJC00079BEDVCE(sat)  ICVBE(sat)  IChFE  ICPC  TaIC  VCEIC  IBfT  IECob  VCBVCER  RBE00 16040 12080200600400800Ambient temperature T

Pagina 3

2SB1321A3SJC00079BEDICEO  Ta110102103104Ambient temperature Ta (°C)02001601208040VCE = −10 VICEO (Ta)ICEO (Ta = 25°C)This product complies with t

Pagina 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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